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IRG4BC30UDPBF insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = 1.95v @v ge = 15v, i c = 12a parameter min. typ. max. units r jc junction-to-case - igbt ------ ------ 1.2 r jc junction-to-case - diode ------ ------ 2.5 c/w r cs case-to-sink, flat, greased surface ------ 0.50 ------ r ja junction-to-ambient, typical socket mount ----- ----- 80 wt weight ------ 2 (0.07) ------ g (oz) thermal resistance ultrafast copack igbt 11/3/03 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 23 i c @ t c = 100c continuous collector current 12 i cm pulsed collector current 92 a i lm clamped inductive load current 92 i f @ t c = 100c diode continuous forward current 12 i fm diode maximum forward current 92 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 100 p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) benefits ? generation -4 igbt's offer highest efficiencies available ? igbts optimized for specific application conditions ? hexfred diodes optimized for performance with igbts . minimized recovery characteristics require less/no snubbing ? designed to be a "drop-in" replacement for equivalent industry-standard generation 3 ir igbts pd-94810 w t o -22 0 ab www.irf.com 1 ? lead-free ? ultrafast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode ? generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 ? igbt co-packaged with hexfred tm ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations ? industry standard to-220ab package
IRG4BC30UDPBF 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ---- 50 75 i c = 12a qge gate - emitter charge (turn-on) ---- 8.1 12 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ---- 18 27 v ge = 15v t d(on) turn-on delay time ---- 40 ---- t j = 25c t r rise time ---- 21 ---- ns i c = 12a, v cc = 480v t d(off) turn-off delay time ---- 91 140 v ge = 15v, r g = 23 ? t f fall time ---- 80 130 energy losses include "tail" and e on turn-on switching loss ---- 0.38 ---- diode reverse recovery. e off turn-off switching loss ---- 0.16 ---- mj see fig. 9, 10, 11, 18 e ts total switching loss ---- 0.54 0.9 t d(on) turn-on delay time ---- 40 ---- t j = 150c, see fig. 9, 10, 11, 18 t r rise time ---- 22 ---- ns i c = 12a, v cc = 480v t d(off) turn-off delay time ---- 120 ---- v ge = 15v, r g = 23 ? t f fall time ---- 180 ---- energy losses include "tail" and e ts total switching loss ---- 0.89 ---- mj diode reverse recovery. l e internal emitter inductance ---- 7.5 ---- nh measured 5mm from package c ies input capacitance ---- 1100 ---- v ge = 0v c oes output capacitance ---- 73 ---- pf v cc = 30v see fig. 7 c res reverse transfer capacitance ---- 14 ---- ? = 1.0mhz t rr diode reverse recovery time ---- 42 60 ns t j = 25c see fig. ---- 80 120 t j = 125c 14 i f = 12a i rr diode peak reverse recovery current ---- 3.5 6.0 a t j = 25c see fig. ---- 5.6 10 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ---- 80 180 nc t j = 25c see fig. ---- 220 600 t j = 125c 16 di/dt 200a/s di (rec)m /dt diode peak rate of fall of recovery ---- 180 ---- a/s t j = 25c see fig. during t b ---- 120 ---- t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ---- ---- v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ---- 0.63 ---- v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ---- 1.95 2.1 i c = 12a v ge = 15v ---- 2.52 ---- v i c = 23a see fig. 2, 5 ---- 2.09 ---- i c = 12a, t j = 150c v ge(th) gate threshold voltage 3.0 ---- 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ---- -11 ---- mv/c v ce = v ge , i c = 250a g fe forward transconductance 3.1 8.6 ---- s v ce = 100v, i c = 12a i ces zero gate voltage collector current ---- ---- 250 a v ge = 0v, v ce = 600v ---- ---- 2500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ---- 1.4 1.7 v i c = 12a see fig. 13 ---- 1.3 1.6 i c = 12a, t j = 150c i ges gate-to-emitter leakage current ---- ---- 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
IRG4BC30UDPBF www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0.1 1 10 100 0.1 1 10 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a 0.1 1 10 100 56789101112 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter voltage (v) a v = 10v 5s pulse width cc load current ( a ) 0 4 8 12 16 0.1 1 10 100 f, frequency (khz) a 60% of rated voltage i duty cycle: 50% t = 125 c t = 90c gate drive as specified turn-on losses include effects of reverse recovery sink j power dissipation = 21w
IRG4BC30UDPBF 4 www.irf.com fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature fig. 6 - maximum igbt effective transient thermal impedance, junction-to-case 0 5 10 15 20 25 25 50 75 100 125 150 maximum dc collector current (a t , case temperature (c) c v = 15v ge a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a t , junction temperature (c) j i = 24a i = 12a i = 6.0a c c c
IRG4BC30UDPBF www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 400 800 1200 1600 2000 1 10 100 ce c, capacitance (pf) v , collector-to-emitter voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0 1020304050 ge v , gate-to-emitter voltage (v) g q , total gate charge (nc) a v = 400v i = 12a ce c total switchig losses (mj) 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 a t , junction temperature (c) j r = 23 ? v = 15v v = 480v i = 24a i = 12a i = 6.0a g ge cc c c c total switchig losses (mj) 0.50 0.52 0.54 0.56 0.58 0.60 0 102030405060 g a r , gate resistance ( ? ) v = 480v v = 15v t = 25c i = 12a cc ge j c
IRG4BC30UDPBF 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 0.1 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j 0.0 0.4 0.8 1.2 1.6 2.0 0102030 c i , collector-to-emitter current (a) a r = 23 ? t = 150c v = 480v v = 15v g j cc ge total switchig losses (mj)
IRG4BC30UDPBF www.irf.com 7 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 0 200 400 600 100 1000 f di /dt - (a/s) rr q - (nc) i = 6.0a i = 12a i = 24a v = 200v t = 125c t = 25c r j j f f f 10 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 12a i = 24a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 0 40 80 120 160 100 1000 f di /dt - (a/s) t - (ns) rr i = 24a i = 12a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 6.0a i = 12a i = 24a f f f v = 200v t = 125c t = 25c r j j
IRG4BC30UDPBF 8 www.irf.com t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr
IRG4BC30UDPBF www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v 19. 20. r l = 480v 4 x i c @25c 0 - 480v 18. 18'
IRG4BC30UDPBF 10 www.irf.com notes: repetitive rating: v ge =20v; pulse width limited by maximum junction tem- perature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 23 ? (figure 19) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector to-220ab package outline dimensions are shown in millimeters (inches) to-220ab part marking information example: in the assembly line "c" this is an irf1010 lot code 1789 assembled o n ww 19, 1997 part number assembly lot code date code year 7 = 1997 line c week 19 logo rectifier in tern atio nal note: "p" in assembly line position indicates "lead-free" data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/03
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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